MOSRA: An efficient and versatile MOS aging modeling and reliability analysis solution for 45nm and below

MOS device aging caused by hot-carrier injection (HCI) and negative/positive bias-temperature instability (N/PBTI) is increasingly more responsible for IC reliability failure for advanced process technology nodes. Accurate aging modeling and fast yet trustable reliability signoff are thus mandatory in process development and circuit design. This paper will first present an aging model that takes into account accurately those aging mechanisms and is silicon proven for various processes down to 32/28nm. The model formulation on bias, geometry and temperature and, in particular, a unique methodology for modeling the AC partial-recovery effect of BTI is detailed and analyzed. It will then demonstrate an efficient SPICE simulation analysis flow that incorporates this model as well as many and any custom aging models developed by foundries and design houses. Both the model and the simulation flow make an efficient and versatile MOS reliability and analysis solution (MOSRA) that has been used successfully in numerous tapeouts and silicon debugging for 45nm and below.