Title :
A switchable dual-band LNA with simultaneous noise and input impedance matching for GSM/TD-SCDMA applications
Author :
Wang, Hongrui ; Zeng, Dajie ; Yang, Dongxu ; Zhang, Li ; Wang, Yan ; Yu, Zhiping
Author_Institution :
Dept. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A switchable dual-band low power low noise amplifier operated at 900MHz/1.95GHz has been designed for GSM/TD-SCDMA applications using 0.13 μm CMOS process. To achieve noise matching and input matching at both bands, a tunable capacitance bank and a switchable inductor for L-match are utilized. Four gain modes are accommodated with current splitting technique at the second stage. The post-layout simulated results are gains of 26.5 dB and 25.2 dB, and noise figures of 1.85 dB and 2.05 dB at the two frequency bands, respectively. The total power consumption is 7.5 mW under 1.2 V voltage supply.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; cellular radio; code division multiple access; impedance matching; integrated circuit layout; integrated circuit noise; low noise amplifiers; low-power electronics; switching circuits; CMOS process; GSM; L-match; TD-SCDMA application; frequency 1.95 GHz; frequency 900 MHz; input impedance matching; low power low noise amplifier; noise matching; post-layout simulation; power consumption; size 0.13 mum; switchable dual-band LNA; switchable inductor; tunable capacitance bank; Dual band; Gain; Impedance; Impedance matching; Logic gates; Noise; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667412
