Title :
Integrated CMOS power sensors for RF BIST applications
Author :
Hsieh, Hsieh-Hung ; Lu, Liang-Hung
Author_Institution :
Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
Abstract :
This paper presents the design and experimental results of fully integrated CMOS power sensors for RF built-in self-test (BIST) applications. Using a standard 0.18-mum CMOS process, the power sensors, on-chip terminations and switches are integrated with a 5.2-GHz variable-gain amplifier. Built-in RF test was performed on the amplifier in the vicinity of 5.2 GHz for demonstration. With the proposed built-in power sensors and BIST technique, the circuit parameters of the amplifier including the forward gain and gain compression were extracted without expensive automatic test equipments while minimum performance degradation of the device under test (DUT) is maintained at multigigahertz frequencies
Keywords :
CMOS integrated circuits; built-in self test; electric sensing devices; integrated circuit design; 0.18 micron; 5.2 GHz; DUT; RF BIST applications; RF built-in self-test; device under test; integrated CMOS power sensors; on-chip switches; on-chip terminations; variable-gain amplifier; Automatic test equipment; Built-in self-test; CMOS process; Circuit testing; Performance evaluation; Performance gain; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches;
Conference_Titel :
VLSI Test Symposium, 2006. Proceedings. 24th IEEE
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7695-2514-8
DOI :
10.1109/VTS.2006.40
