DocumentCode :
1631613
Title :
Ten kilowatt self-commutated resonant inverter using MOS controlled thyristors
Author :
Jones, Franklin ; Kerfoot, Charles ; Kemerer, Ray ; Carter, Charles
Author_Institution :
Westinghouse Electron. Syst. Group, Baltimore, MD, USA
fYear :
1990
Firstpage :
659
Lastpage :
667
Abstract :
A 50 kHz full-bridge series/parallel resonant inverter has been developed to provide a 10 kW high-voltage output from 270 V DC input power. The inverter uses MOS controlled thyristors as self commutated switches. Multilayer ceramic chip capacitors and gapped ferrite planar inductors serve as resonant elements to allow high power density. The design, computer simulation, and breadboard evaluation of the inverter are described.<>
Keywords :
commutation; insulated gate field effect transistors; invertors; thyristor applications; 10 kW; 270 V; 50 kHz; MOS controlled thyristors; breadboard evaluation; computer simulation; full-bridge inverter; gapped ferrite planar inductors; high power density; input power; multilayer ceramic chip capacitors; resonant elements; self commutated switches; self-commutated resonant inverter; series/parallel resonant inverter; Ceramics; Computer simulation; Ferrites; Inductors; MOS capacitors; Nonhomogeneous media; Resonance; Resonant inverters; Switches; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1990. APEC '90, Conference Proceedings 1990., Fifth Annual
Conference_Location :
Los Angeles, CA, USA
Type :
conf
DOI :
10.1109/APEC.1990.66366
Filename :
66366
Link To Document :
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