Title :
Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides
Author :
Cheng, Jen-Yuan ; Lu, Hui-Ting ; Yang, Che-Yu ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The edge field enhanced deep depletion phenomenon in metal-oxide-semiconductor (MOS) structure was demonstrated. The analysis in inversion to deep depletion of ultra-thin SiO2 and HfO2 was conducted using critical field model. By examine the field ratio between edge and bulk, it is observed that the HfO2 has larger ratio than SiO2. It is supposed the edge field enhanced deep depletion phenomenon dominates both capacitance-voltage and current-voltage behavior.
Keywords :
MIS structures; hafnium compounds; silicon compounds; HfO2; MOS structures; SiO2; capacitance-voltage behavior; critical field model; current-voltage behavior; edge field enhanced deep depletion phenomenon; metal-oxide-semiconductor structure; ultra-thin gate oxides; Analytical models; Capacitance; Capacitance-voltage characteristics; Lighting; Logic gates; Silicon; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667446
