Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS structures

Author

Fang, Zhong-Hui ; Chen, Kun-Ji ; Ma, Zhong-Yuan ; Liu, Guang-Yuan ; Qian, Xin-Ye ; Jiang, Xiao-Fan ; Zhang, Xian-Gao ; Huang, Xin-Fan

Author_Institution

State Key Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China

fYear

2010

Firstpage

1581

Lastpage

1583

Abstract

Size-controlled nanocrystals (Si NCs) in floating gate MOS structure have been fabricated by thermal annealing of Si-rich SiNx layers with high ratio of Si/N. High resolution transmission electronic microscopy (HRTEM) reveals the size of Si NCs can be controlled by varying the thickness of Si-rich SiNx layer. Based on the analysis of XPS and Raman measurement, the relation between the size of Si NCs and the thickness of Si-rich SiN_x is discussed.

Keywords

MIS structures; Raman spectra; X-ray photoelectron spectra; annealing; elemental semiconductors; nanofabrication; nanostructured materials; silicon; silicon compounds; transmission electron microscopy; HRTEM; Raman spectra; Si-rich silicon nitride; SiN_x-Si; XPS; floating gate MOS structure; high resolution transmission electronic microscopy; size-controlled nanocrystals; thermal annealing; Annealing; Atomic measurements; Capacitance-voltage characteristics; Nonvolatile memory; Periodic structures; Silicon; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667450

Filename

5667450