Advanced lateral power MOSFETs for power integrated circuits

CMOS compatible power devices have been an intensely pursued area in the past few decades. Power integrated circuit technologies are now accessible by many designers via popular foundry services. This paper is a brief review on modern integrated power transistors including the recently introduced CMOS compatible Orthogonal Gate extended drain MOSFETs (OG-EDMOS) and the lateral superjunction power FINFETs with embedded 3D trench gate. The characteristics of these devices are discussed and a perspective on the future trend of integrated power transistors is presented.