SiC Warm-wall LPCVD growth on multiple 50-mm diameter wafers

Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating susceptor that can support up to six 50 mm-diameter wafers. Results from the initial growth runs are presented. The results have shown that all the films exhibited a SiC(111) texture at 35.6°. Also, atomic force microscopy (AFM) scans indicated an atomically smooth surface with a roughness (RMS) of 5.74 nm (5 × 5μm²).