Title :
An integrated micro immunosensor for hemoglobin-A1c level detection
Author :
Xue, Qiannan ; Bian, Chao ; Zhang, Hong ; Xia, Shanhong
Author_Institution :
State Key Lab. of Transducer Technol., Grad. Univ. of Chinese Acad. of Sci., Beijing, China
Abstract :
A micro potentiometric immunosensor based on an integrated chip and a micro extended gate electrode array was reported, which can detect hemoglobin and HbA1c simultaneously. It is free labeling, simple and convenient. The integrated chip based on standard CMOS technology was consisted of the ISFET/REFET sensing device and signal-processing circuit. The electrode array was fabricated by MEMS method. A two-layer structured monolayer is formed on the anti-HbA1c/anti-hemoglobin gold electrode by the mixed self-assembled monolayers (SAMs) technique. The immunosensor exhibited the sensitivity of 0.35mV/μg ml-1 and 0.13mV/μg ml-1 for HbA1c and hemoglobin, respectively. Short response time is within 2 min and high accuracy is above 99.4%.
Keywords :
CMOS integrated circuits; bioMEMS; blood; chemical sensors; ion sensitive field effect transistors; monolayers; potentiometers; proteins; self-assembly; ISFET/REFET sensing device; MEMS method; antiHbA1c gold electrode; antihemoglobin gold electrode; electrode array; hemoglobin-A1c level detection; integrated chip; integrated microimmunosensor; microextended gate electrode array; micropotentiometric immunosensor; mixed self-assembled monolayer; signal-processing circuit; standard CMOS technology; two-layer structured monolayer; Biosensors; Blood; Immune system; Micromechanical devices; Ion-sensitive field-effect transistors (ISFETs); Micro immunosensor; Potentiometric; mixed self-assembled monolayers;
Conference_Titel :
Mechatronics and Embedded Systems and Applications (MESA), 2010 IEEE/ASME International Conference on
Conference_Location :
Qingdao
Print_ISBN :
978-1-4244-7101-0
DOI :
10.1109/MESA.2010.5552067
