Title :
A W-band monolithic medium power amplifier
Author :
Morgan, M. ; Weinreb, S.
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper summarizes the design and measured performance of a MMIC power amplifier for W-band. The chip was fabricated on a 50 /spl mu/m GaAs substrate using 0.1 /spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic-HEMT technology. Measurements show that it has small-signal gain of 19/spl plusmn/1 dB from 72 to 95 GHz. During scalar measurements with moderate heat-sinking, the chip delivered more than 100 mW between 75 and 93 GHz, with a corresponding large signal gain of 11 dB. Such an amplifier is widely useful in millimeter-wave applications requiring moderately high power over broad frequency ranges, including emerging wireless communication systems in W-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; integrated circuit measurement; millimetre wave power amplifiers; thermal management (packaging); 0.1 micron; 100 mW; 11 dB; 18 to 20 dB; 50 micron; 72 to 95 GHz; 75 to 93 GHz; 8 percent; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs pseudomorphic-HEMT technology; MIMIC power amplifiers; W-band monolithic medium power amplifiers; W-band wireless communication systems; amplifier small/large signal gain; broad frequency range mm-wave power amplifiers; chip heat-sinking; Gain measurement; Gallium arsenide; High power amplifiers; Indium gallium arsenide; MMICs; Millimeter wave communication; Millimeter wave measurements; Power amplifiers; Power measurement; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210900
