• DocumentCode
    1633366
  • Title

    Scaling of EOT beyond 0.5nm

  • Author

    Ahmet, P. ; Kitayama, D. ; Kaneda, T. ; Suzuki, T. ; Koyanagi, T. ; Kouda, M. ; Mamatrishat, M. ; Kawanago, T. ; Kakushima, K. ; Iwai, H.

  • Author_Institution
    Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2010
  • Firstpage
    994
  • Lastpage
    996
  • Abstract
    In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La2O3 high-k gate dielectric. An EOT of 0.43nm was obtained from a TiN/W/La2O3(3nm)/n-Si capacitor by optimizing the thickness W layer. Our results show that a proper gate electrode is one of the most important factors for realizing EOT below 0.5nm.
  • Keywords
    MOSFET; capacitors; electrodes; high-k dielectric thin films; lanthanum compounds; semiconductor thin films; EOT scaling; La2O3; MOSFET; capacitor; gate electrode; high-k gate dielectric; rare earth; size 0.43 nm; Annealing; Dielectrics; High K dielectric materials; Logic gates; Silicon; Thermal stability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667512
  • Filename
    5667512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1633366