The effects of total ionizing dose on the neutron SEU cross section of a 130 nm 4 Mb SRAM memory

Author

Fonseca Pereira Junior, Evaldo Carlos ; Lelis Gonçalez, Odair ; Galhardo Vaz, Rafael ; Federico, C.A. ; Hanna Both, Thiago ; Wirth, Gilson Inacio

Author_Institution

Div. de Fis. Aplic., Inst. de Estudos Avancados, São José dos Campos, Brazil

fYear

2014

fDate

12-15 March 2014

Firstpage

1

Lastpage

4

Abstract

Fast neutron single event upset (SEU) cross section of an 130 nm 4 Mb SRAM memory was measured by exposing the memory chip to a known quasi-isotropic fast neutron fluency from a radioactive ²⁴¹Am-Be neutron source. The cross section measurements were performed after exposing the memory chip to three gamma-rays accumulated doses steps and it was observed a slight growing of the neutron SEU cross section according the total ionizing dose (TID).

Keywords

SRAM chips; neutron effects; neutron sources; radiation hardening (electronics); radioactive sources; SRAM memory; gamma-rays accumulated dose; memory chip exposing; neutron SEU cross section; quasi-isotropic fast neutron fluency; radioactive ²⁴¹Am-Be neutron source; single event upset; size 130 nm; total ionizing dose effect; Aerospace electronics; Neutrons; Radiation effects; Random access memory; Single event upsets; Transient analysis; Transistors; SEU; SRAM Memory; Single Event Effects; bit flip; neutron;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Workshop - LATW, 2014 15th Latin American

Conference_Location

Fortaleza

Type

conf

DOI

10.1109/LATW.2014.6841919

Filename

6841919