DocumentCode :
1634367
Title :
Storage Class Memory
Author :
Lam, Chung H.
Author_Institution :
IBM Res., T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2010
Firstpage :
1080
Lastpage :
1083
Abstract :
This paper describes the development of a new class of solid state memory known as Storage Class Memory (SCM). We will examine various memory technologies that promise to become the emerging SCM standard currently under development in research laboratories and memory manufacturing facilities around the world. We will focus our attention mostly in the enterprise space and extrapolate the future of SCM in this space for the next 10 years.
Keywords :
semiconductor storage; SCM standard; memory manufacturing facility; solid state memory; storage class memory; Flash memory; Magnetic tunneling; Metals; Phase change random access memory; Programming; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667551
Filename :
5667551
Link To Document :
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