• DocumentCode
    1634367
  • Title

    Storage Class Memory

  • Author

    Lam, Chung H.

  • Author_Institution
    IBM Res., T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2010
  • Firstpage
    1080
  • Lastpage
    1083
  • Abstract
    This paper describes the development of a new class of solid state memory known as Storage Class Memory (SCM). We will examine various memory technologies that promise to become the emerging SCM standard currently under development in research laboratories and memory manufacturing facilities around the world. We will focus our attention mostly in the enterprise space and extrapolate the future of SCM in this space for the next 10 years.
  • Keywords
    semiconductor storage; SCM standard; memory manufacturing facility; solid state memory; storage class memory; Flash memory; Magnetic tunneling; Metals; Phase change random access memory; Programming; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667551
  • Filename
    5667551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1634367