DocumentCode :
1634770
Title :
A Ka-band 3-bit RF MEMS switched line phase shifter implemented in coplanar waveguide
Author :
Wang, Zheng ; Liu, Zewen ; Li, Xiang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2010
Firstpage :
1450
Lastpage :
1452
Abstract :
A Ka-band 3 bit RF MEMS switched line phase shifter implemented in coplanar waveguide (CPW) on Borofloat™ glass substrate is presented. The basic switched line phase shifter unit is composed of two single-pole double-throw (SPDT) switches with phase offset transmission line lengths. Air-bridge with step compensation technique is used to improve the mm-wave performance of CPW discontinuities such as bend and Tee-junction. The SPDT switch composed of matched Tee-junction and two compact metal-to-metal contact series MEMS switches is optimized to obtain broad band performance. The three-bit phase shifter is designed to shift 0°, 45°, 90°, 135°, 180°, 225°, 270°, 315° at 35GHz and the measured RMS phase error is only 2.3°. The average insertion loss over all states is 2.35dB. Return loss is better than -12dB at Ka band for all eight states.
Keywords :
coplanar waveguides; microswitches; phase shifters; Borofloat glass substrate; RF MEMS switched line phase shifter; air-bridge; coplanar waveguide; phase offset transmission line lengths; single-pole double-throw switches; Coplanar waveguides; Insertion loss; Micromechanical devices; Microwave theory and techniques; Phase shifters; Radio frequency; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667567
Filename :
5667567
Link To Document :
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