Title :
Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 conductive-bridging-RAMs and HfO2 Oxide-RAMs
Author :
Gonon, Patrice ; Vallee, Christophe ; Jousseaume, Vincent ; Bernard, Yoann ; Mannequin, Cédric ; Mougenot, Mathieu ; Grampeix, Helen
Author_Institution :
LTM, UJF, Grenoble, France
Abstract :
We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming voltage and current. The switching kinetics is limited by oxygen vacancy diffusion in OxRRAMs and by copper nucleation in CBRAMs.
Keywords :
copper compounds; nucleation; random-access storage; silicon compounds; Cu-SiO2; conductive-bridging-RAM; copper nucleation; oxide RAM; resistive RAM technologies; switching characteristics; switching kinetics; Anodes; Copper; Delay; Electric fields; Gold; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667571
