Laser spike annealing for n-type Ge junction & Ti silicide formation

We investigate the use of sub-millisecond laser spike annealing (LSA) for two applications: n-type germanium shallow junction activation and titanium silicide formation. For Ge junction, impact of various process parameters including dwell times, peak annealing and substrate temperatures are evaluated. Arsenic dopant activation level of ~1e20 cm^-3 is obtained. It is shown that short dwell time is preferred due to better junction scalability and reduced dopant loss. For Ti silicide, different analytical methods are used to identify the phases at various stages of LSA induced silicidation. Evidence of TiSi₂ C40 phase, which typically does not occur in conventional thermal annealing, is observed in LSA annealed samples.