Characteristics and modeling of Si-nanowire FETs

In this paper, the C-V and I-V characteristics of Si-nanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Si-nanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I-V data free from the effect of the series resistance are obtained and fitted with compact model. Finally, the volume trap density N_t is characterized and discussed in correlation with differing oxide processes and the 1/f noise as the critical reliability issue in Si-NWFET.