Significant roles of ultra-high energy ion implanter for high performance image sensing devices

Ultra-high energy implants with boron at the energy of 5 MeV and phosphorous at the energy of 8 MeV can reach at 6.2 μm and 4.3 μm in silicon substrates, respectively. Such high energy implants give image sensors superior characteristics and are now available on both a batch type and single-wafer type of implanters. There are several pros and cons for each type of ultra-high energy implanters. The comparison points are accuracy of implant angle, amount of implant damage, damage uniformity, throughput, beam setup time, wafer cooling capability, particle attack, dose undulation, outgas influence, and so on. Contribution of the ultra-high energy implant to high-performance image sensing devices is described with contradistinction of the batch and single-wafer type implanters.