A metamorphic GaAs HEMT-distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

Author

Wolf, G. ; Happy, H. ; Demichel, S. ; Leblane, R. ; Blache, F. ; Lefèvre, R. ; Dambrine, Gilles

Author_Institution

Inst. d Electron. de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq

Volume

1

fYear

2005

Firstpage

27

Abstract

An eight stage distributed amplifier with 12.5 dB plusmn 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 mum metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation, from 9 to 40 GHz is plusmn 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; microwave field effect transistors; millimetre wave amplifiers; millimetre wave field effect transistors; optical receivers; 40 Gbit/s; 50 GHz; 9 to 40 GHz; GaAs; distributed amplifier; fiber pig-tailed module; metamorphic GaAs HEMT; photodiode; photoreceiver; Bandwidth; Circuits; Delay; Distributed amplifiers; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; Noise figure; mHEMTs; MMICs; distributed amplifiers; fiber optic communication; metamorphic HEMT; microstrip circuits; photoreceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

0-7803-9128-4

Type

conf

DOI

10.1109/MAPE.2005.1617838

Filename

1617838