Characterization of junction capacitance parameters for Gaussian/constant doping profiles

A new model for the junction capacitance parameters for junctions that can be described by a Gaussian/constant doping profile is presented. The model relies on accurate approximations for the error function and its integral. On the basis of these approximations, routines which accurately predict the built-in potential of the junction and the zero-bias junction capacitances for a wide range of junction parameters have been constructed. Values of the built-in potential, zero-bias capacitance, and capacitance versus voltage characteristics for typical junction parameters are shown