Title :
Polysilicon-emitter bipolar transistors with interfacial nitride
Author :
Nouri, Faran ; Scharf, Brad
Author_Institution :
Analog Devices Semicond., Wilmington, MA, USA
Abstract :
Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors
Keywords :
bipolar transistors; elemental semiconductors; reliability; semiconductor device noise; silicon; stability; Si:P; bipolar transistors; electrical reliability; interfacial nitride; noise characteristics; polysilicon emitter; thermal stability; Atomic measurements; Bipolar transistors; Electron emission; Equations; Implants; Rapid thermal processing; Reproducibility of results; Silicon; Thermal resistance; Tunneling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274077
