Title :
On-die CMOS leakage current sensor for measuring process variation in sub-90nm generations
Author :
Kim, Chris H. ; Roy, Kaushik ; Hsu, Steven ; Krishnamurthy, Ram K. ; Borkar, Shekhar
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
This paper describes an on-die leakage current sensor in 1.2V, 90nm CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs, while the proposed sensor only requires a single bias generator even for multi-bit resolution sensing. A 6-channel leakage current monitor testchip fabricated in 90nm dual-Vt CMOS is also described.
Keywords :
CMOS integrated circuits; integrated circuit measurement; integrated circuit noise; leakage currents; 1.2 V; 90 nm; P/N skew variations; measuring process variation; on-die CMOS leakage current sensor; signal-to-noise ratio; CMOS process; CMOS technology; Current measurement; Leakage current; Monitoring; Sensor phenomena and characterization; Signal design; Signal generators; Signal resolution; Signal to noise ratio;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346576
