A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

Author

Wang, Shaodi ; Zhang, Lining ; Zhang, Jian ; Wang, Wenping ; Wu, Wen ; Zhang, Xukai ; Liu, Zhiwei ; Bian, Wei ; He, Frank ; Chan, Mansun

Author_Institution

Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China

fYear

2010

Firstpage

1880

Lastpage

1882

Abstract

In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson´s equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared with TCAD simulations, the proposed current model shows less than 1.05% errors, with the doping concentrations ranging from 1.5 × 10¹⁶ cm^-3 to 1.5 × 10¹⁸ cm^-3 and different bias conditions. The proposed model is appropriate for precise and quick circuit simulation.

Keywords

Poisson equation; circuit simulation; silicon; technology CAD (electronics); thin film transistors; 1D Poisson´s equation; TCAD simulation; circuit simulation; doping concentration; monocrystalline silicon thin-film transistor; potential-based analytic model; systems on glass substrate; Doping; Integrated circuit modeling; Mathematical model; Numerical models; Numerical simulation; Semiconductor process modeling; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667744

Filename

5667744