Title :
Temperature behavior of 4H-SIC MOS capacitor used as a gas sensor
Author :
Pascu, R. ; Pristavu, G. ; Badila, M. ; Brezeanu, G. ; Draghici, F. ; Craciunoiu, F.
Author_Institution :
Univ. Politeh. of Bucharest, Bucharest, Romania
Abstract :
Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.
Keywords :
MOS capacitors; encapsulation; gas sensors; silicon compounds; temperature sensors; thermal stability; wide band gap semiconductors; 4H-SiC MOS capacitor; C-V characteristics; MOS structure; SiC; electrical parameter; encapsulated sample; gas sensor; temperature behavior; thermal stability; wafer measurement; Capacitance-voltage characteristics; MOS capacitors; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Threshold voltage; MOS Capacitor; Silicon Carbide; Temperature;
Conference_Titel :
Semiconductor Conference (CAS), 2014 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4799-3916-9
DOI :
10.1109/SMICND.2014.6966430
