Title :
Capacitance of back-gated nanowires in various dielectric embeddings
Author :
Boldeiu, George ; Moagar-Poladian, Victor ; Sandu, Titus
Author_Institution :
Nat. Inst. for R&D in Microtechnol. (IMT), Bucharest, Romania
Abstract :
The effect of dielectric embedding on the capacitance of back-gated nanowires can be accurately captured as an effective dielectric constant that depends solely on the difference between the nanowire-gate distance and the dielectric thickness. When used for sensing purposes this property provides the maximum sensitivity within a range of two diameters around the center of the nanowire.
Keywords :
nanowires; permittivity; back-gated nanowire capacitance; dielectric embeddings; dielectric thickness; effective dielectric constant; nanowire center; nanowire-gate distance; Capacitance; Dielectrics; Electric potential; Field effect transistors; Logic gates; Nanowires; Sensors; capacitance; carrier m obility; field effect transistor; semiconductor nanowire;
Conference_Titel :
Semiconductor Conference (CAS), 2014 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4799-3916-9
DOI :
10.1109/SMICND.2014.6966458
