Title :
Improved tunable performance of high Q-factor BaxSr1−xTiO3 film bulk acoustic wave resonators
Author :
Vorobiev, Alexey ; Gevorgian, S.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
Improved tunable performance of high Q-factor BaxSr1-xTiO3 film bulk acoustic wave resonators (FBARs), achieved by varying Ba concentration, is demonstrated. The Ba0.5Sr0.5TiO3 FBARs reveal tunability of series resonance frequency up to 2.4%, electromechanical coupling coefficient up to 7.5% and rather high figure of merit, Qf≈1300 GHz. Correlations between the measured electroacoustic parameters are analyzed using the theory of dc bias induced piezoelectric effect in paraelectric phase ferroelectrics.
Keywords :
Q-factor; acoustic resonators; barium compounds; bulk acoustic wave devices; ferroelectric thin films; strontium compounds; titanium compounds; BaxSr1-xTiO3; FBAR; dc bias induced piezoelectric effect; electroacoustic parameters; electromechanical coupling coefficient; high Q-factor film bulk acoustic wave resonators; paraelectric phase ferroelectrics; series resonance frequency; Couplings; Film bulk acoustic resonators; Films; Permittivity; Q-factor; Resonant frequency; Temperature; BaxSr1−xTiO3 thin films; tunable FBARs;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
