Title :
Studies on SIC process for the improvement of VPNP performance
Author :
Li Rongqiang ; Zhong Yi ; Xian Wenjia ; Liu Yukui
Author_Institution :
Nat. Lab. of Analog IC´s, Chongqing, China
Abstract :
An VPNP device optimization technology was presented for complementary bipolar process. Based on process and device simulation, an SIC process for high speed NPN transistor improvement was applied to the optimization of VPNP transistor. Sub-micron VPNP trasistor increases its feature frequency by 30%, namely, more than 3.0GHz. It features breakdown voltage of BVceo>6.0V, which results to a wider application in complementary bipolar process.
Keywords :
analogue integrated circuits; transistors; SIC process; VPNP device optimization technology; complementary bipolar process; high speed NPN transistor; selectively implanted collecter; submicron VPNP trasistor; Doping; Integrated circuits; Performance evaluation; Process control; Silicon carbide; Time frequency analysis; Transistors; Analog IC; Complementary Bipolar(CB); Selectively Implanted Collecter(SIC);
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667823
