Title :
Optimal structure for resonant THz detection of plasmons-polaritons in the 2D quantum wells
Author :
Cao, L. ; Grimault-Jacquin, A.-S. ; Aniel, F. ; Poisson, Marie-Antoinette ; Delage, S. ; Sagnes, I. ; Le Gratiet, Luc
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris Sud, Orsay, France
Abstract :
We investigate terahertz plasmon-polariton (PP) resonances for hetero-structures (AlGaN/GaN, SiGe/Si/SiGe, AlGaAs/GaAs and InAlN/GaN) with grating coupler in order to find the optimal structure. We show a modeling work devoted to a parametric study (influence of geometry, temperature...) that the resonances are tunable in frequency allowing a control of the terahertz detection. The modeling shows that AlGaN/GaN and InAlN/GaN heterostructures present the highest PP resonances at 300K. Then we compare modeling with room temperature and cryogenic temperature FTIR measurements on group III-N heterostructures which are indeed the most promising.
Keywords :
Fourier transform spectra; Ge-Si alloys; III-V semiconductors; aluminium compounds; cryogenics; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectra; plasmons; polaritons; semiconductor heterojunctions; semiconductor quantum wells; silicon; terahertz wave detectors; wide band gap semiconductors; 2D quantum wells; AlGaAs-GaAs; AlGaN-GaN; III-N heterostructures; InAlN-GaN; PP resonances; SiGe-Si-SiGe; cryogenic temperature FTIR measurements; grating coupler; heterostructures; optimal structure; resonant terahertz detection control; temperature 300 K; terahertz plasmon-polariton resonances; Absorption; Aluminum gallium nitride; Gallium nitride; Gratings; Plasma temperature; Silicon germanium; Temperature measurement; Terahertz detctor; plasmon-polariton;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
