HV-LCD drivers IC on novel 150V-BCD process platform

Author

Huang, Wei ; Wang, Sheng ; Hu, Nanzhong ; Zhang, Shudan ; Xu, Juyan

Author_Institution

58th Res. Inst., China Electron. Technol. Group Corp. (CETC), Wuxi, China

fYear

2010

Firstpage

120

Lastpage

122

Abstract

A novel 150V-BCD technology by using 14um thick epitaxy based on 0.35um standard CMOS process has been developed for LCD backlighting application. In the whole process with 24 steps, HV circuit block, including VDNMOS and LDPMOS with double resurf principle, and LV block are integrated together. Advanced deep trench isolation (DTI) technology with the breakdown voltage above 150V is firstly in place of conventional piso isolation (PISO) structure to protect HV block from LV block. Finally, it is shown that designed IC driver can satisfy the EL lamp application with frequency at least 400Hz of the switch signal and the power supply about 100 V. For the simplicity of the technology, the cost is also apparently saved.

Keywords

CMOS integrated circuits; driver circuits; electric breakdown; isolation technology; liquid crystal displays; BCD technology; CMOS process; DTI technology; EL lamp; HV circuit block; HV-LCD drivers IC; LCD backlighting; LDPMOS; VDNMOS; breakdown voltage; deep trench isolation; piso isolation; size 0.35 mum; size 14 mum; switch signal; voltage 150 V; Capacitance; Diffusion tensor imaging; Driver circuits; Integrated circuits; Logic gates; Power supplies; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667829

Filename

5667829