Title :
A 100 V, 10 mA high-voltage driver ICs for field emission display applications
Author :
Park, M.Y. ; Kim, J. ; Lee, D.W. ; Park, J.S. ; Cho, K.I. ; Cho, H.J.
Author_Institution :
Micro-Electron. Res. Lab., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
We have developed the gate driver IC with 64-channel outputs and the PWM cathode driver IC with 32-channel outputs for driving row/column line of FED panel. The developed gate and the cathode driver ICs having full-complementary high voltage output circuit and CVSL type level shifter are suited for low power consumption, high speed switching as 20 MHz, high output drive voltages ranging from 20 V to 100 V and 20 mA current driving. The high-voltage output stages perform 100 V switching of 50 pF capacitive load with 100 ns of rising/falling time obtained. The LDMOS technology that is completely compatible with 1.2 μm analog CMOS process is used to decrease the production cost and increase the packing density of panel driving system. The gate and cathode driver ICs applied 25×25 FED panels driving board show excellent driving characteristics
Keywords :
CMOS analogue integrated circuits; driver circuits; field emission displays; power integrated circuits; 1.2 micron; 20 MHz; 20 mA; 20 to 100 V; CVSL-type level shifter; LDMOS technology; PWM cathode driver IC; analog CMOS process; field emission display; full-complementary high voltage output circuit; gate driver IC; high-voltage driver IC; row/column line driver; CMOS process; CMOS technology; Cathodes; Driver circuits; Energy consumption; Flat panel displays; Production systems; Pulse width modulation; Switching circuits; Voltage;
Conference_Titel :
ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5705-1
DOI :
10.1109/APASIC.1999.824113
