An accurate and versatile equivalent circuit model for RF-MEMS circuit optimization in BiCMOS technology

An accurate and very large band (30-110GHZ) lumped element equivalent circuit of capacitive RF-MEMS components based on a standard 250nm BiCMOS technology is presented. The most relevant advantage of the proposed model is that it takes into account the geometrical and the technological process parameters, hence allowing device synthesis and further optimization. This versatility is demonstrated first by showing the accuracy of the model in the frequency scalable behavior of an existing shunt capacitive switch. Afterwards the versatile proposed model is used in the design of a new component, a series capacitive switch. The excellent agreement between the developed model and the measurements of fabricated series devices, in first iteration, proofs the effectiveness of the model.