Title :
Automated determination of device noise parameters using multi-frequency, source-pull data
Author :
Colangeli, Sergio ; Ciccognani, W. ; Palomba, Mirko ; Limiti, Ernesto
Author_Institution :
Dept. of Electr. Eng., Univ. of Tor Vergata, Rome, Italy
Abstract :
In this paper a novel approach for determining device noise parameters over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most ten constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the active device equivalent circuit.
Keywords :
equivalent circuits; high electron mobility transistors; semiconductor device noise; HEMT; active device equivalent circuit; device noise parameters; multifrequency source-pull data; single-frequency noise parameters; Frequency measurement; Microwave FETs; Microwave circuits; Noise; Noise measurement;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2