Title :
BJMOSFET based on SOI
Author :
Yun, Zeng ; Zhang Van ; Li Xiaolel ; Lin, Zhang ; Shaohua, Zhou
Author_Institution :
Microelectron. Inst., Hunan Univ., Changsha, China
Abstract :
A new-style compound device of BJT and MOS-bipolar junction MOSFET based on SOI (SOI BJMOSFET) has been proposed. The structure of SOI BJMOSFET was introduced and the work principle was analyzed reasonably. Its different characteristics were also discussed in detailed. From the detailed analysis and research, it is concluded that SOI BJMOSFET is assuredly a much more excellent new-style solid electronic device.
Keywords :
MOSFET; bipolar transistors; silicon-on-insulator; bipolar junction MOSFET-based SOI; compound solid electronic device; metal oxide semiconductor field effect transistor; silicon-on-insulator; Doping; FETs; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon; Solids; Substrates; Thick films; Voltage; BJMOSFET; SOI; solid electronic device;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1618062
