Title :
Anomalous diffusion of dopant in Si substrate during oxynitride process
Author :
Yaegashi, T. ; Aoki, N. ; Takeuchi, Y. ; Hazama, H. ; Aritome, S. ; Shirota, R.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Unexpectedly enormously enhanced diffusions of B and P in Si substrate during gate oxynitride process have been clarified for the first time. The apparent diffusion enhancement is observed in the reoxidation process after nitridation in NH/sub 3/ ambient. The oxidation enhanced diffusion (OED) factors of B and P are about 15 times larger than the normal OED factor, which is ascribed to the increase of interstitial Si at oxynitride/Si interface. The enormously enhanced diffusion affects the device characteristics and should be taken into account in order to perform accurate simulation for submicron MOSFETs with oxynitride gate.
Keywords :
MOSFET; diffusion; elemental semiconductors; interstitials; nitridation; oxidation; semiconductor doping; silicon; Si substrate; Si:B; Si:P; dopant diffusion; gate oxynitride process; interstitial; oxidation enhanced diffusion; submicron MOSFET; Annealing; Argon; Boron; Laboratories; MOSFET circuits; Microelectronics; Oxidation; Semiconductor films; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824165
