DocumentCode
1643299
Title
Wide bandgap semiconductor microwave technologies: from promise to practice
Author
Zolper, J.C.
Author_Institution
Office of Naval Res., Arlington, VA, USA
fYear
1999
Firstpage
389
Lastpage
392
Abstract
SiC and GaN based microwave devices offer significant performance advantages over conventional semiconductors. These advantages include increased power density, total power, and efficiency. In this article, the status and prospects for these device is presented.
Keywords
III-V semiconductors; gallium compounds; microwave power transistors; silicon compounds; wide band gap semiconductors; GaN; SiC; power microwave device; wide bandgap semiconductor; Conducting materials; Electrons; Frequency; Gallium nitride; Linearity; MESFETs; Microwave devices; Microwave technology; Silicon carbide; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824176
Filename
824176
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