Title :
Wide bandgap semiconductor microwave technologies: from promise to practice
Author_Institution :
Office of Naval Res., Arlington, VA, USA
Abstract :
SiC and GaN based microwave devices offer significant performance advantages over conventional semiconductors. These advantages include increased power density, total power, and efficiency. In this article, the status and prospects for these device is presented.
Keywords :
III-V semiconductors; gallium compounds; microwave power transistors; silicon compounds; wide band gap semiconductors; GaN; SiC; power microwave device; wide bandgap semiconductor; Conducting materials; Electrons; Frequency; Gallium nitride; Linearity; MESFETs; Microwave devices; Microwave technology; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824176
