Title :
A research of dual-port SRAM cell using 8T
Author :
Zhang, Kai-ji ; Chen, Kun ; Pan, Wei-tao ; Ma, Pei-Jun
Author_Institution :
Key Lab. of Wide Band-gap Semicond. Mater. & Devices of Minist. of Educ., Xidian Univ., Xi´´an, China
Abstract :
High speed, low power and compatibility with standard technology Static random access memory (SRAM) is essential for system on chip (SoC) technology. In this paper, we first present a 6T-SRAM (1WR) and two types of 8T-SRAM cell(2WR 1W1R). After that how the (1W1R) cell work with external unit is explained, and we compare the SNM sensitivity and the write/read operations time of 1WR 1W1R cell.
Keywords :
SRAM chips; system-on-chip; 1WR 1W1R cell; 6T-SRAM; 8T-SRAM; SNM sensitivity; SoC technology; dual-port SRAM cell; standard technology static random access memory; system on chip; write-read operations time; Arrays; Flip-flops; Inverters; Noise; Random access memory; System-on-a-chip; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667886
