Title :
A low-voltage fully-integrated CMOS power amplifier for mobile WiMAX subscriber station
Author :
Renjing Pan ; Kiat Seng Yeo ; Manh Anh Do ; Chirn Chye Boon ; Jiangmin Gu
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper describes a low-voltage fully-integrated CMOS power amplifier for 3.5 GHz mobile WiMAX (IEEE 802.16 standard) subscriber station application based on Chartered´s 0.18 ¿m IC process. Through simulations using a supply voltage of 1.8 V indicate a capability to deliver a maximum output power of 24 dBm to a 50 ¿ antenna, with PO1dB of 22.7 dBm corresponding to PO1dBof -1.89 dBm. A power gain of 25.87 dB and a voltage gain of 27 dB can be obtained through a 3-stage cascade configuration, and the power added efficiency (PAE) at PO1dB can achieve almost 24%. In addition, this is the first WiMAX power amplifier that can operate under 1.8 V supply in the literature.
Keywords :
CMOS integrated circuits; WiMax; low-power electronics; microwave power amplifiers; telecommunication standards; IEEE 802.16 standard; cascade configuration; frequency 3.5 GHz; fully integrated CMOS power amplifier; gain 25.87 dB; gain 27 dB; mobile WiMAX subscriber station; size 0.18 mum; voltage 1.8 V; Broadband amplifiers; CMOS integrated circuits; CMOS process; Gain; Linearity; Power amplifiers; Power generation; Quality of service; Voltage; WiMAX; CMOS; WiMAX; fully-integrated; low voltage; power amplifier;
Conference_Titel :
SoC Design Conference (ISOCC), 2009 International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5034-3
Electronic_ISBN :
978-1-4244-5035-0
DOI :
10.1109/SOCDC.2009.5423786
