Title :
A novel atomic layer doping technology for ultra-shallow junction in sub-0.1 /spl mu/m MOSFETs
Author :
Song, Y.H. ; Kim, K.Y. ; Bae, J.C. ; Kato, K. ; Arakawa, E. ; Kim, K.S. ; Park, K.T. ; Kurino, H. ; Koyanagi, M.
Author_Institution :
Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.
Keywords :
MOS integrated circuits; MOSFET; arsenic; boron; chemical interdiffusion; integrated circuit technology; p-n junctions; rapid thermal annealing; semiconductor doping; 0.1 micron; As diffusion; B diffusion; N-type doping; P-type doping; RTA; Si:As; Si:B; adsorbed layer; atomic layer doping technology; drain extension; low sheet resistance; rapid thermal annealing; source extension; sub-0.1 /spl mu/m MOSFETs; ultra-shallow junction; Atomic layer deposition; Atomic measurements; Boron; Cleaning; Controllability; Doping profiles; Ion implantation; MOSFETs; Machine intelligence; Rapid thermal annealing;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824203
