Title :
Development of GaN based MMIC for next generation X-Band space SAR T/R module
Author :
Barigelli, A. ; Ciccognani, W. ; Colangeli, Sergio ; Colantonio, P. ; Feudale, M. ; Giannini, F. ; Giofre, R. ; Lanzieri, C. ; Limiti, Ernesto ; Nanni, A. ; Pantellini, A. ; Romanini, P.
Author_Institution :
Thales Alenia Space Italia, Italy
Abstract :
This paper deals with the development of GaN-based solution for X Band T/R Module of future SAR generations. In Particular HPA and LNA MMIC solutions have been investigated and produced using a 0.25 μm GaN HEMT process provided by SELEX-SI featured by a 4W/mm power density. Obtained results demonstrate promising performance both in Output Power and Noise characteristics and open the wider perspectives of medium-term GaN adoption in next generation SAR systems. The present work has been carried out in the frame of a general research and development activity sponsored by Italian Space Agency on the implementation of new technologies for next generation Spaceborn SAR.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium compounds; low noise amplifiers; power amplifiers; spaceborne radar; synthetic aperture radar; wide band gap semiconductors; GaN; HEMT process; HPA; LNA MMIC solutions; high power amplifier; next generation X-Band space SAR T/R module; next generation spaceborne SAR; noise characteristics; output power characteristics; power density; size 0.25 mum; synthetic aperture radars; Gain; Gallium nitride; Logic gates; MMICs; Noise; Power generation; Temperature measurement; GaN technology; T/R module; high power amplifier; low noise amplifiers;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
