200-W Operation of an Ion-Implanted Vertical-Cavity Surface-Emitting Laser Array

Author

Aoki, Yuya ; Miyamoto, Masayuki ; Naito, H. ; Higuchi, Akira ; Torii, Kentaro ; Nagakura, Toshiaki ; Kageyama, Nobuto ; Aoshima, Hiroki ; Morita, Takahito ; Maeda, Jukai ; Yoshida, Hiroyuki

Author_Institution

Hamamatsu Photonics K.K., Hamamatsu, Japan

Volume

50

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

510

Lastpage

514

Abstract

We have demonstrated a high-power 980-nm vertical-cavity surface-emitting laser diode (VCSEL) array with ion-implanted current apertures. The device was characterized on an exclusively developed water-cooled heat sink for the VCSEL array. A peak output power of over 200 W has been achieved under quasi-continuous-wave operation at a cooling water temperature of 10 °C. The VCSEL array consists of 635 emitters, which were defined by proton implantation and arranged in a closest packed arrangement with 175-μm-spacing in 5 mm × 5 mm square. The results provide a chance to the next step for a higher-power VCSEL array.

Keywords

heat sinks; ion implantation; laser cavity resonators; semiconductor laser arrays; surface emitting lasers; VCSEL array; closest packed arrangement; cooling water temperature; high-power vertical-cavity surface-emitting laser diode array; ion-implanted current apertures; ion-implanted vertical-cavity surface-emitting laser array; output power; power 200 W; proton implantation; quasicontinuous-wave operation; temperature 10 degC; water-cooled heat sink; wavelength 980 nm; Arrays; Diode lasers; Heat sinks; Power generation; Vertical cavity surface emitting lasers; Semiconductor lasers; ion implantation; power lasers; semiconductor laser arrays; vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2323055

Filename

6814291