Title :
Issues in modeling small devices
Author :
Laux, S.E. ; Fischetti, M.V.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
What issues remain unanticipated in modeling ultrasmall devices? We attempt to offer a few, possibly new, ideas to the existing and prevailing thoughts on this subject. We focus on only three areas: quantum mechanics, self-consistency and Coulomb effects, all from a Si MOSFET perspective.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; Coulomb effects; Si; Si MOSFET; quantum mechanics; self-consistency; ultrasmall device model; Acoustic scattering; Boltzmann equation; Capacitive sensors; Electron mobility; MOSFET circuits; Monte Carlo methods; Phonons; Physics computing; Silicon; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824207
