Title :
Explaining the dependences of electron and hole mobilities in Si MOSFET´s inversion layer
Author :
Pirovano, A. ; Lacaita, A.L. ; Zandler, G. ; Oberhuber, R.
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
Abstract :
In this paper we report a detailed study of the surface roughness (SR) limited mobility and, for the first time, a physical explanation of the different dependences of the electron and hole mobilities. Based on full-band Monte Carlo simulations, we show that the differences between hole and electron experimental mobilities can be accounted for by using a steeper tail of the SR power spectrum at high wave-vector values. The new power spectral density allows to fit all the experimental data at room and cryogenic temperature, with the same parameter values for both electrons and holes. The spatial dependence of the new SR spectrum is discussed and compared to the features of the SR described by exponential and Gaussian auto-covariance functions.
Keywords :
Gaussian distribution; MOSFET; Monte Carlo methods; covariance analysis; electron mobility; elemental semiconductors; exponential distribution; hole mobility; interface roughness; inversion layers; semiconductor device models; silicon; Gaussian auto-covariance functions; MOSFET inversion layer; Si-SiO/sub 2/; cryogenic temperature; electron mobility; exponential auto-covariance functions; full-band Monte Carlo simulations; high wave-vector values; hole mobility; power spectral density; room temperature; spatial dependence; steeper tail; surface roughness limited mobility; Charge carrier density; Charge carrier processes; Electron mobility; MOSFET circuits; Physics; Scattering; Shape; Strontium; Tail; Temperature;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824208
