Effect of technology on the input transistor selection criteria of a low noise preamplifier

Author

Noulis, T. ; Siskos, S. ; Sarrabayrouse, G.

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Greece

Volume

1

fYear

2004

Firstpage

51

Abstract

An analysis of a preamplifier noise behaviour, of a low-energy X-rays strip detector for space applications, is presented. The ratio of equivalent thermal noise (enc_th) to enc₁f/ is defined as the noise comparison ratio (NCR) and is used as the preamplifier input transistor selection criterion. The effect of low-noise preamplifier CMOS technology on noise minimization is thoroughly examined. The preamplifier was designed in AMS 0.6μm process, with NMOS and PMOS input MOSFET, and in DMILL 0.8μm, with NMOS input MOSFET. Analysis is supported by simulation results, which confirm that the selection of the preamplifier input transistor, for a given shaper, is depended on the noise parameters of the used technology.

Keywords

CMOS integrated circuits; MOSFET; field effect transistors; preamplifiers; radiation detection; semiconductor device noise; 0.6 micron; 0.8 micron; AMS; CMOS technology; DMILL; MOSFET; NMOS; PMOS; equivalent thermal noise ratio; input transistor selection criteria; low noise preamplifier; low-energy X-rays strip detector; low-noise preamplifier; noise comparison ratio; noise minimization; noise parameters; preamplifier noise behaviour; space applications; CMOS technology; MOS devices; MOSFET circuits; Noise shaping; Preamplifiers; Signal to noise ratio; Space technology; Strips; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean

Print_ISBN

0-7803-8271-4

Type

conf

DOI

10.1109/MELCON.2004.1346769

Filename

1346769