Title :
Mid-IR type-II interband cascade lasers based on InAs/GaInSb heterostructures
Author :
Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E. ; Yang, R.Q.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
In this work, we present recent results demonstrating interband cascade lasers (ICLs) at wavelengths near 4 microns. Three different MBE growths, on different vendor substrates, have led to ICL devices with good structural quality and good laser performance. For example, we observed peak output powers exceeding 4 W/facet at 80 K, pulsed operation up to 217 K cw operation at 70 K, and differential quantum efficiencies exceeding 450%.
Keywords :
III-V semiconductors; current density; gallium compounds; heat sinks; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 3.9 mum; 70 to 217 K; InAs-GaInSb; InAs/GaInSb heterostructures; MBE growth; cw operation; differential quantum efficiency; heat sinking; laser performance; mid-IR type-II interband cascade lasers; peak output power; pulsed operation; structural quality; type II quantum well structures; Chemical lasers; Laser modes; Laser radar; Power generation; Quantum cascade lasers; Semiconductor lasers; Substrates; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824225
