Title :
Photon recycling semiconductor light emitting diode
Author :
Xiaoyun Guo ; Graff, John ; Schubert, E.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Abstract :
A new white light emitting diode, the photon recycling semiconductor light emitting diode (PRS-LED) is demonstrated. The device consists of a GaInN/GaN LED emitting in the blue spectral range and an AlGaInP photon recycling semiconductor emitting at the complementary color. The PRS-LED thus has two emission lines, one in the blue and one in the amber wavelength range. The theoretical luminous efficiency of the PRS-LED exceeds 300 lm/W, higher than the efficiency of phosphor-based white LEDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; 470 nm; 630 nm; AlGaInP; AlGaInP photon recycling semiconductor; GaInN-GaN; GaInN/GaN LED; PRS-LED; amber wavelength range; blue spectral range; complementary color; dichromatic semiconductor light source; emission lines; light power ratio; luminous efficiency; photon recycling semiconductor light emitting diode; white light emitting diode; Gallium nitride; Humans; Hydrogen; Light emitting diodes; Light sources; Optical sensors; Phosphors; Power generation; Recycling; Stimulated emission;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824226
