Layered Ta-nitrides (LTN) barrier film by power swing sputtering (PSS) technique for MOCVD-Cu damascene interconnects

Author

Tagami, M. ; Furuya, A. ; Onodera, T. ; Hayashi, Y.

Author_Institution

ULSI Res. Lab., NEC Corp., Sagamihara, Japan

fYear

1999

Firstpage

635

Lastpage

638

Abstract

Layered Ta-nitride (LTN) barrier film, which is composed of a TaN/sub 0.1/ polycrystalline film on a Ta/sub 2/N amorphous film, is developed for MOCVD-Cu damascene interconnects. The LTN-barrier film is easily obtained by the unique power-swing-sputtering technique, in which the RF-power is changed only from low-power for Ta/sub 2/N to high-power for TaN/sub 0.1/. The MOCVD-Cu film adheres well to the top-layered TaN/sub 0.1/ polycrystalline films due to the suppression of the accumulation of fluorine (F) at the Cu/barrier interface. The bottom-layered Ta/sub 2/N amorphous film blocks Cu diffusion. The MOCVD-Cu damascene interconnects with the LTN-barrier film are estimated to maintain reliability over 10 years under the condition of in 150 /spl deg/C, 2 MV/cm.

Keywords

MOCVD coatings; adhesion; copper; diffusion barriers; integrated circuit interconnections; integrated circuit reliability; sputter deposition; tantalum compounds; 10 year; 150 C; Cu diffusion blocking; Cu-Ta/sub 2/N-TaN/sub 0.1/; Cu/barrier interface; F accumulation suppression; MOCVD-Cu damascene interconnects; RF-power; Ta/sub 2/N amorphous film; TaN/sub 0.1/ polycrystalline film; adhesion; layered TaN/sub x/ barrier film; power swing sputtering; reliability; Adhesives; Amorphous magnetic materials; Amorphous materials; Copper; Power system interconnection; Radio frequency; Semiconductor films; Silicon compounds; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824233

Filename

824233