Optimized halo structure for 80 nm physical gate CMOS technology with indium and antimony highly angled ion implantation

Author

Miyashita, K. ; Yoshimura, H. ; Takayanagi, M. ; Fujiwara, M. ; Adachi, K. ; Nakayama, T. ; Toyoshima, Y.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1999

Firstpage

645

Lastpage

648

Abstract

Application of heavy ions of antimony and indium to the halo structure of 80 nm physical gate CMOS is optimized theoretically and experimentally. For pMOSFETs, highly angled antimony ion implantation is found to be effective in controlling the short channel effect (SCE) with high drive current and low junction leakage current. In contrast, for nMOSFETs, the highly angled indium halo is not necessarily effective in controlling SCE.

Keywords

CMOS integrated circuits; MOSFET; antimony; indium; ion implantation; leakage currents; semiconductor device models; semiconductor process modelling; 80 nm; 80 nm physical gate CMOS technology; Si:In; Si:Sb; device simulation; halo implantation conditions optimization; heavy ion implantation; high drive current; highly angled ion implantation; low activation efficiency; low junction leakage current; nMOSFET; optimized halo structure; pMOSFET; short channel effect control; transient enhanced diffusion; CMOS technology; CMOSFETs; Electronic mail; Implants; Indium; Ion implantation; Laboratories; Leakage current; MOSFET circuits; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824235

Filename

824235