DocumentCode :
1644946
Title :
Challenges and Opportunities for Compound Semiconductors in the Mobile Handset
Author :
Anwar, Asif ; Taylor, Chris
Author_Institution :
Strategic Technol. Practice, Strategy Analytics, Newton, MA
fYear :
2006
Firstpage :
16
Lastpage :
17
Abstract :
Strategy Analytics believes that compound semiconductor penetration of wireless markets will continue to be driven by GaAs technology. Overall market growth for GaAs devices will continue to be derived from wireless markets, with cellular handsets being the primary driver over the next five years. In the handset, the emphasis for GaAs will remain on the switch and PA functions centred on GaAs HBT and pHEMT technologies. Silicon technologies will continue to dominate the cellular handset in functions outside of the cellular front-end, but the added complexity of multi-mode and multi-band handsets will increase GaAs device penetration in handset front ends at the expense of Si LDMOS and lead to a significant increase in the overall GaAs real estate in cellular handset front-end modules. Coupled with increasing GaAs demand from other markets, the total market will exceed $3 billion by the end of 2006, growing at a CAAGR of 7 percent through to 2010
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; mobile handsets; power amplifiers; GaAs; GaAs devices; GaAs technology; Si LDMOS; cellular handsets; compound semiconductors; front-end modules; heterojunction bipolar transistor; high electron mobility transistor; mobile handset; multiband handsets; multimode handsets; pHEMT technologies; power amplifier; silicon technologies; wireless markets; Gallium arsenide; Mobile handsets; Multiaccess communication; PHEMTs; Power amplifiers; Semiconductor optical amplifiers; Silicon; Switches; Telephone sets; Transceivers; GaAs; cellular handsets; compound semiconductor; front-end modules; power amplifier; silicon; wireless;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
Type :
conf
DOI :
10.1109/CSICS.2006.319907
Filename :
4109966
Link To Document :
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