Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

Author

Deal, W.R. ; Din, S. ; Radisic, V. ; Padilla, J. ; Mei, X.B. ; Yoshida, W. ; Liu, P.H. ; Uyeda, J. ; Barsky, M. ; Gaier, T. ; Fung, A. ; Samoska, L. ; Lai, R.

Author_Institution

Northrop Grumman Space & Mission Syst., Redondo Beach, CA

fYear

2006

Firstpage

33

Lastpage

36

Abstract

In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S₂₁ gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300-GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S₂₁ gain at sub-millimeter wave frequencies in a MMIC

Keywords

HEMT integrated circuits; MMIC amplifiers; coplanar waveguides; low noise amplifiers; 2.5 dB; 280 GHz; 3 dB; 300 GHz; 35 nm; HEMT; InP; MMIC amplifiers; coplanar waveguide; high electron mobility transistors; low noise amplifier; sub-millimeter wave integrated circuit; Frequency measurement; Gain measurement; Gold; HEMTs; Indium phosphide; Laboratories; MMICs; Probes; Radiofrequency amplifiers; Submillimeter wave integrated circuits; Coplanar Waveguide; HEMT; Low Noise Amplifier; MMIC; Millimeter-Wave; S-MMIC; Sub-millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319912

Filename

4109971