Title :
A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers
Author :
Niwa, T. ; Ishigaki, T. ; Shimawaki, H. ; Nashimoto, Y.
Author_Institution :
Compound Semicond. Dept., NEC Compound Semicond. Devices Ltd., Shiga, Japan
Abstract :
This paper reports on an InGaP/GaAs HBT with a GaAs/InGaP composite collector for a GSM power amplifier. The GaAs/InGaP composite collector enables the device to pass a ruggedness test with SWR=10:1 at V/sub CE/ >5 V, keeping the total collector thickness of around 900 nm and with a high power added efficiency (PAE). The load-pull measurement results for multi-cell HBTs with total emitter size of 7200 /spl mu/m/sup 2/ reveals a PAE of 74% at Pout=35 dBm and V/sub CE/=3.5 V for the composite collector.
Keywords :
III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; cellular radio; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; 3.5 V; 74 percent; 900 MHz; 900 nm; GSM power amplifiers; InGaP-GaAs; PAE; collector-emitter breakdown voltage; composite-collector InGaP/GaAs HBT; heterojunction bipolar transistors; high ruggedness HBT; load-pull measurements; multi-cell HBT total emitter size; power added efficiency; ruggedness test SWR; total collector thickness; Degradation; GSM; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Pulse measurements; Semiconductor optical amplifiers; Temperature; Testing; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212471
